Skip to Main content Skip to Navigation
Journal articles

Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111)

Abstract : Analysis of homoepitaxial growth on Ir(111) by scanning tunneling microscopy (STM) reveals that two different phases nucleate. We find islands in the regular face-centered cubic (fcc) stacking as well as in the hexagonal close-packed (hcp) stacking. Performing STM measurements on fcc and hcp areas shows an apparent, voltage dependent height difference of up to 6% of the regular layer distance. By applying first-principles calculations, the voltage dependent height difference can be attributed to the difference in the electronic structures of the two phases. The atoms in hcp stacking appear lower for a wide range of tunneling voltages, opposite to the actual relaxation.
Document type :
Journal articles
Complete list of metadata

https://hal.univ-reims.fr/hal-03541843
Contributor : Stéphanie BAUD Connect in order to contact the contributor
Submitted on : Monday, January 24, 2022 - 10:58:01 PM
Last modification on : Tuesday, September 13, 2022 - 4:18:23 PM

Links full text

Identifiers

Collections

Citation

C. Busse, S. Baud, G. Bihlmayer, C. Polop, T. Michely, et al.. Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111). Physical Review B, American Physical Society, 2003, 68 (20), pp.201401. ⟨10.1103/PhysRevB.68.201401⟩. ⟨hal-03541843⟩

Share

Metrics

Record views

15