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Journal Articles Physical Review B Year : 2003

Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111)

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1
C. Busse
  • Function : Author
G. Bihlmayer
  • Function : Author
C. Polop
  • Function : Author
T. Michely
  • Function : Author
S. Blügel
  • Function : Author

Abstract

Analysis of homoepitaxial growth on Ir(111) by scanning tunneling microscopy (STM) reveals that two different phases nucleate. We find islands in the regular face-centered cubic (fcc) stacking as well as in the hexagonal close-packed (hcp) stacking. Performing STM measurements on fcc and hcp areas shows an apparent, voltage dependent height difference of up to 6% of the regular layer distance. By applying first-principles calculations, the voltage dependent height difference can be attributed to the difference in the electronic structures of the two phases. The atoms in hcp stacking appear lower for a wide range of tunneling voltages, opposite to the actual relaxation.

Dates and versions

hal-03541843 , version 1 (24-01-2022)

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C. Busse, S. Baud, G. Bihlmayer, C. Polop, T. Michely, et al.. Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111). Physical Review B, 2003, 68 (20), pp.201401. ⟨10.1103/PhysRevB.68.201401⟩. ⟨hal-03541843⟩
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